TI IRF232

TI · FETs & Power MOSFETs · MPN IRF232

No reviews yet — be the first to review TI IRF232.

Specifications

Configuration-
Drain to Source Voltage200V
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

200V 8A 4V 75W 600mΩ@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs

Related FETs & Power MOSFETs