TI · FETs & Power MOSFETs · MPN IRF231
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
150V 9A 4V 75W 400mΩ@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs