TI · FETs & Power MOSFETs · MPN IRF122
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 60W |
| RDS(on) | 360mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
100V 9.2A 60W 360mΩ 1 N-channel N-Channel TO-3 Single FETs, MOSFETs