TI HUF76139S3

TI · FETs & Power MOSFETs · MPN HUF76139S3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)78nC@10V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

30V 75A 3V 200W 11mΩ@4.5V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs

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