TI · FETs & Power MOSFETs · MPN HUF76139S3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | N-Channel |
30V 75A 3V 200W 11mΩ@4.5V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs