TI · FETs & Power MOSFETs · MPN HUF76113T3ST
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 20.5nC@10V |
| Output Capacitance(Coss) | 310pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 31mΩ@10V |
| Input Capacitance(Ciss) | 625pF |
| Type | N-Channel |
30V 4.7A 3V 1.1W 31mΩ@10V N-Channel Single FETs, MOSFETs RoHS