TI HUF75344S3

TI · FETs & Power MOSFETs · MPN HUF75344S3

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)-
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation155W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

55V 155W 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs

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