TI HUF75339S3

TI · FETs & Power MOSFETs · MPN HUF75339S3

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)130nC@10V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation124W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

55V 70A 4V 124W 12mΩ@10V 1 N-channel N-Channel TO-262AA Single FETs, MOSFETs

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