TI HUF75333S3ST

TI · FETs & Power MOSFETs · MPN HUF75333S3ST

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)85nC@20V
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

55V 66A 4V 150W 16mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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