TI · FETs & Power MOSFETs · MPN HUF75333S3ST
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 85nC@20V |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
55V 66A 4V 150W 16mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS