TI · FETs & Power MOSFETs · MPN HUF75309P3
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| Gate Charge(Qg) | 13.5nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 55W |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
55V 19A 4V 55W 70mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs