TI HUF75309D3

TI · FETs & Power MOSFETs · MPN HUF75309D3

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Specifications

Gate Charge(Qg)13.5nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

55V 17A 4V 45W 70mΩ@10V 1 N-channel N-Channel IPAK Single FETs, MOSFETs

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