TI HUF75307D3ST

TI · FETs & Power MOSFETs · MPN HUF75307D3ST

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Specifications

Gate Charge(Qg)20nC@20V
Drain to Source Voltage55V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)250pF

Technical details

55V 15A 4V 45W 90mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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