TI HP4936DYT

TI · FETs & Power MOSFETs · MPN HP4936DYT

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Specifications

Current - Continuous Drain(Id)5.8A
Pd - Power Dissipation2W
RDS(on)37mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)625pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)270pF

Technical details

5.8A 2W 37mΩ@10V 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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