TI · FETs & Power MOSFETs · MPN HP4936DY
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| RDS(on) | 55mΩ@4.5V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Input Capacitance(Ciss) | 625pF |
| Gate Charge(Qg) | 25nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 270pF |
5.8A 55mΩ@4.5V 2W 1V FET, MOSFET Arrays RoHS