TI HP4936DY

TI · FETs & Power MOSFETs · MPN HP4936DY

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Specifications

Current - Continuous Drain(Id)5.8A
RDS(on)55mΩ@4.5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Input Capacitance(Ciss)625pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)270pF

Technical details

5.8A 55mΩ@4.5V 2W 1V FET, MOSFET Arrays RoHS

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