TI CSD88539NDT

TI · FETs & Power MOSFETs · MPN CSD88539NDT

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Specifications

Current - Continuous Drain(Id)15A
Pd - Power Dissipation2.1W
RDS(on)23mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)2.6pF
Number2 N-Channel
Input Capacitance(Ciss)741pF
Gate Charge(Qg)7.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 15A 2.1W Surface Mount SOIC-8

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