TI · FETs & Power MOSFETs · MPN CSD88539ND
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| Current - Continuous Drain(Id) | 15A |
|---|---|
| Pd - Power Dissipation | 2.1W |
| RDS(on) | 27mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.6pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 741pF |
| Gate Charge(Qg) | 7.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 91pF |
N-Channel Array 60V 15A 2.1W Surface Mount SOIC-8