TI CSD88537NDT

TI · FETs & Power MOSFETs · MPN CSD88537NDT

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Specifications

Current - Continuous Drain(Id)16A
Pd - Power Dissipation2.1W
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)5.2pF
Number2 N-Channel
Input Capacitance(Ciss)1.4nF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

16A 2.1W 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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