TI · FETs & Power MOSFETs · MPN CSD88537ND
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 16A |
| Pd - Power Dissipation | 2.1W |
| RDS(on) | 19mΩ@6V |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.4nF |
| Gate Charge(Qg) | 14nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 60V 16A 2.1W Surface Mount SOIC-8