TI CSD87588N

TI · FETs & Power MOSFETs · MPN CSD87588N

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)30A
Pd - Power Dissipation6W
RDS(on)12.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
Type-
Reverse Transfer Capacitance (Crss@Vds)80.4pF
Number2 N-Channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)17.9nC@4.5V
Operating Temperature-55℃~+125℃

Technical details

N-Channel Array 30V 30A 6W PTAB-5(2.5x3)

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