TI CSD87503Q3ET

TI · FETs & Power MOSFETs · MPN CSD87503Q3ET

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Specifications

Configuration-
Current - Continuous Drain(Id)10A
Pd - Power Dissipation15.6W
RDS(on)21.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)194pF
Number-
Input Capacitance(Ciss)1.02nF
Gate Charge(Qg)42.8nC@10V
Operating Temperature-

Technical details

10A 15.6W 21.9mΩ@4.5V 2.1V VSON-8(3.2x3.2) FET, MOSFET Arrays RoHS

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