TI CSD87503Q3E

TI · FETs & Power MOSFETs · MPN CSD87503Q3E

No reviews yet — be the first to review TI CSD87503Q3E.

Specifications

Current - Continuous Drain(Id)10A
Pd - Power Dissipation15.6W
RDS(on)21.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)17.4nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

10A 15.6W 21.9mΩ@4.5V 2.1V VSON-8(3.2x3.2) FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs