TI CSD87502Q2T

TI · FETs & Power MOSFETs · MPN CSD87502Q2T

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Specifications

Current - Continuous Drain(Id)5A
RDS(on)32.4mΩ@10V
Pd - Power Dissipation2.3W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
Number2 N-Channel
Input Capacitance(Ciss)353pF
Gate Charge(Qg)6nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 5A 2.3W Surface Mount WSON-6(2x2)

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