TI CSD87335Q3D

TI · FETs & Power MOSFETs · MPN CSD87335Q3D

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)25A
Pd - Power Dissipation6W
RDS(on)6.7mΩ@5V
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
Type-
Reverse Transfer Capacitance (Crss@Vds)36pF
Number2 N-Channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)14nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

25A 6W 6.7mΩ@5V 1.9V 2 N-Channel LSON-8(3.3x3.3) FET, MOSFET Arrays RoHS

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