TI CSD87334Q3DT

TI · FETs & Power MOSFETs · MPN CSD87334Q3DT

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)20A
RDS(on)8.3mΩ@3.5V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
Type-
Reverse Transfer Capacitance (Crss@Vds)21pF
Number2 N-Channel
Input Capacitance(Ciss)1.26nF
Gate Charge(Qg)8.3nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

20A 8.3mΩ@3.5V 48W 1.2V 2 N-Channel LSON-8(3.3x3.3) FET, MOSFET Arrays RoHS

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