TI CSD87313DMST

TI · FETs & Power MOSFETs · MPN CSD87313DMST

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Specifications

ConfigurationCommon Drain
Pd - Power Dissipation2.7W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
Number2 N-Channel
Input Capacitance(Ciss)4.29nF
Gate Charge(Qg)28nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

2.7W 1.2V 2 N-Channel WSON-8(3.3x3.3) FET, MOSFET Arrays RoHS

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