TI · FETs & Power MOSFETs · MPN CSD87313DMST
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| Configuration | Common Drain |
|---|---|
| Pd - Power Dissipation | 2.7W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 30V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.29nF |
| Gate Charge(Qg) | 28nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
2.7W 1.2V 2 N-Channel WSON-8(3.3x3.3) FET, MOSFET Arrays RoHS