TI CSD87313DMS

TI · FETs & Power MOSFETs · MPN CSD87313DMS

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)17A
RDS(on)5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.25V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)200pF
Number2 N-Channel
Input Capacitance(Ciss)4.29nF
Gate Charge(Qg)28nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)365pF

Technical details

N-Channel Array 30V Surface Mount WSON-8(3.3x3.3)

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