TI CSD87312Q3E

TI · FETs & Power MOSFETs · MPN CSD87312Q3E

No reviews yet — be the first to review TI CSD87312Q3E.

Specifications

ConfigurationCommon source
Current - Continuous Drain(Id)27A
RDS(on)31mΩ@4.5V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number2 N-Channel
Input Capacitance(Ciss)960pF
Gate Charge(Qg)6.3nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 27A 2.5W Surface Mount VSON-8-EP(3x3)

Related FETs & Power MOSFETs