TI · FETs & Power MOSFETs · MPN CSD86356Q5DT
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 40A |
| Pd - Power Dissipation | 12W |
| RDS(on) | 4.5mΩ@5V;0.8mΩ@5V |
| Gate Threshold Voltage (Vgs(th)) | 1.85V |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.04nF |
| Gate Charge(Qg) | 6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 712pF |
40A 12W 1.85V 2 N-Channel VSON-8(5x6) FET, MOSFET Arrays RoHS