TI · FETs & Power MOSFETs · MPN CSD86350Q5DT
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 40A |
| Pd - Power Dissipation | 13W |
| RDS(on) | 6.6mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4nF |
| Gate Charge(Qg) | 25nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
40A 13W 6.6mΩ@4.5V 2.1V 2 N-Channel LSON-8(5x6) FET, MOSFET Arrays RoHS