TI · FETs & Power MOSFETs · MPN CSD86336Q3DT
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 20A |
| Pd - Power Dissipation | 6W |
| RDS(on) | 9.1mΩ@5V |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 25V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 494pF;970pF |
| Gate Charge(Qg) | 3.8nC@4.5V |
| Operating Temperature | -55℃~+125℃ |
N-Channel Array 25V 20A 6W Surface Mount VSON-8(3.3x3.3)