TI · FETs & Power MOSFETs · MPN CSD86330Q3D
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| Operating Temperature | -55℃~+125℃ |
|---|---|
| Output Capacitance(Coss) | 455pF;880pF |
| Configuration | Half-Bridge |
| Current - Continuous Drain(Id) | 20A |
| Pd - Power Dissipation | 6W |
| RDS(on) | 8.8mΩ@5V;3.3mΩ@5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V;1.1V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF;49pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 920pF;1.66nF |
N-Channel Array 25V 20A 6W Surface Mount LSON-8(3.3x3.3)