TI · FETs & Power MOSFETs · MPN CSD86311W1723
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| RDS(on) | 39mΩ@8V |
| Pd - Power Dissipation | 1.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 585pF |
| Gate Charge(Qg) | 3.1nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 325pF |
4.5A 39mΩ@8V 1.5W 1.4V 2 N-Channel DSBGA-12 FET, MOSFET Arrays RoHS