TI · FETs & Power MOSFETs · MPN CSD85312Q3E
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 39A |
| RDS(on) | 12.4mΩ@8V |
| Pd - Power Dissipation | 2.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.39nF |
| Gate Charge(Qg) | 15.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 39A 2.5W Surface Mount VSON-8(3.3x3.3)