TI CSD85302LT

TI · FETs & Power MOSFETs · MPN CSD85302LT

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)7A
RDS(on)22.5mΩ@6.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.3V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)79pF
Number2 N-Channel
Input Capacitance(Ciss)933pF
Gate Charge(Qg)7.8nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

7A 22.5mΩ@6.5V 1.7W 1.3V 2 N-Channel PicostAr-4(1.3x1.3) FET, MOSFET Arrays RoHS

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