TI CSD85302L

TI · FETs & Power MOSFETs · MPN CSD85302L

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)7A
RDS(on)18.7mΩ@6.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)61pF
Number2 N-Channel
Input Capacitance(Ciss)718pF
Gate Charge(Qg)6nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 7A 1.7W Surface Mount PicostAr-4(1.3x1.3)

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