TI CSD85301Q2

TI · FETs & Power MOSFETs · MPN CSD85301Q2

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Specifications

Current - Continuous Drain(Id)5A
Pd - Power Dissipation2.3W
RDS(on)27mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage20V
Number2 N-Channel
Input Capacitance(Ciss)469pF
Gate Charge(Qg)5.4nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 5A 2.3W Surface Mount WSON-6(2x2)

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