TI CSD83325LT

TI · FETs & Power MOSFETs · MPN CSD83325LT

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)8A
RDS(on)9.9mΩ@4.5V
Pd - Power Dissipation2.3W
Gate Threshold Voltage (Vgs(th))1.25V
Drain to Source Voltage12V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)144pF
Number2 N-Channel
Input Capacitance(Ciss)1.17nF
Gate Charge(Qg)10.9nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 12V 2.3W Surface Mount BGA-6

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