TI CSD75207W15

TI · FETs & Power MOSFETs · MPN CSD75207W15

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Specifications

ConfigurationCommon source
Current - Continuous Drain(Id)3.9A
RDS(on)162mΩ@1.8V
Pd - Power Dissipation700mW
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)13.5pF
Number2 P-Channel
Input Capacitance(Ciss)595pF
Gate Charge(Qg)3.7nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 20V 3.9A 0.7W Surface Mount DSBGA-9

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