TI CSD25501F3

TI · FETs & Power MOSFETs · MPN CSD25501F3

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Specifications

Gate Charge(Qg)1.02nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)91pF
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)4.1pF
RDS(on)120mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)385pF
TypeP-Channel

Technical details

P-Channel 20V 3.6A 500mW Surface Mount LGA-3(0.6x0.7)

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