TI CSD25485F5T

TI · FETs & Power MOSFETs · MPN CSD25485F5T

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.5nC@4.5V
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.4W
RDS(on)35mΩ@8V
Number1 P-Channel
Input Capacitance(Ciss)533pF

Technical details

20V 5.3A 1.3V 1.4W 35mΩ@8V 1 P-Channel PicoStar-3 Single FETs, MOSFETs RoHS

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