TI CSD25484F4T

TI · FETs & Power MOSFETs · MPN CSD25484F4T

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Specifications

Gate Charge(Qg)1.415nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)7.2pF
RDS(on)825mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)230pF
TypeP-Channel

Technical details

P-Channel 20V 2.5A 500mW Surface Mount PicoStar-3

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