TI CSD25483F4T

TI · FETs & Power MOSFETs · MPN CSD25483F4T

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)960pC@4.5V
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
RDS(on)205mΩ@8V
Number1 P-Channel
Input Capacitance(Ciss)198pF

Technical details

20V 1.6A 1.2V 500mW 205mΩ@8V 1 P-Channel PicoStar-3 Single FETs, MOSFETs RoHS

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