TI CSD25481F4

TI · FETs & Power MOSFETs · MPN CSD25481F4

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)913pC@4.5V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
RDS(on)88mΩ@8V
Number1 P-Channel
Input Capacitance(Ciss)189pF

Technical details

P-Channel 20V 2.5A 500mW Surface Mount PicoStar-3

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