TI CSD25404Q3T

TI · FETs & Power MOSFETs · MPN CSD25404Q3T

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Specifications

Gate Charge(Qg)10.9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)1.17nF
Current - Continuous Drain(Id)104A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)5.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.12nF
TypeP-Channel

Technical details

P-Channel 20V 104A 96W Surface Mount VSON-CLIP-8(3.3x3.3)

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