TI CSD25402Q3AT

TI · FETs & Power MOSFETs · MPN CSD25402Q3AT

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.5nC@4.5V
Output Capacitance(Coss)992pF
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.15V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)300mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.79nF
TypeP-Channel

Technical details

P-Channel 20V 72A 2.8W Surface Mount VSONP-8(3x3.3)

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