TI CSD25310Q2T

TI · FETs & Power MOSFETs · MPN CSD25310Q2T

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.7nC@4.5V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation2.9W
RDS(on)23.9mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)655pF

Technical details

P-Channel 20V 20A 2.9W Surface Mount WSON-6(2x2)

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