TI · FETs & Power MOSFETs · MPN CSD25310Q2
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| Gate Charge(Qg) | 3.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 21.7pF |
| RDS(on) | 19.9mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 655pF |
| Type | P-Channel |
P-Channel 20V 9.6A 2.9W Surface Mount WSON-6(2x2)