TI · FETs & Power MOSFETs · MPN CSD25304W1015
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 4.4nC@4.5V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.15V |
| Pd - Power Dissipation | 750mW |
| RDS(on) | 32.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 595pF |
P-Channel 20V 3A 750mW Surface Mount DSBGA-6