TI · FETs & Power MOSFETs · MPN CSD25213W10
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| Gate Charge(Qg) | 2.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 148pF |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.1pF |
| RDS(on) | 39mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 478pF |
| Type | P-Channel |
P-Channel 20V 1.6A 1W Surface Mount DSBGA-4