TI · FETs & Power MOSFETs · MPN CSD25202W15T
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 7.5nC@4.5V |
| Output Capacitance(Coss) | 520pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.05V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 26mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.01nF |
| Type | P-Channel |
20V 4A 1.05V 500mW 26mΩ@4.5V 1 P-Channel P-Channel DSBGA-9 Single FETs, MOSFETs RoHS