TI CSD25202W15

TI · FETs & Power MOSFETs · MPN CSD25202W15

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.5nC@4.5V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.05V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)52mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.01nF
TypeP-Channel

Technical details

P-Channel 20V 4A 0.5W Surface Mount DSBGA-9

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